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MUBW 100-06 A8
Output Inverter T1 - T6
Equivalent Circuits for Simulation
Symbol
Conditions
Maximum Ratings
Conduction
V CES
V GES
I C25
I C80
T VJ = 25°C to 150°C
Continuous
T C = 25°C
T C = 80°C
600
± 20
125
85
V
V
A
A
RBSOA
V GE = ± 15 V; R G = 2.2 Ω ; T VJ = 125°C
Clamped inductive load; L = 100 μH
I CM = 200
V CEK ≤ V CES
A
IGBT (typ. at V GE = 15 V; T J = 125°C)
T1-T6
V 0 = 1.05 V; R 0 = 11.5 m Ω
t SC
(SCSOA)
V CE = V CES ; V GE = ± 15 V; R G = 2.2 Ω ; T VJ = 125°C
non-repetitive
10
μs
T7
V 0 = 1.05 V; R 0 = 21.5 m Ω
P tot
T C = 25°C
410
W
Diode (typ. at T J = 125°C)
D1-D6
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
D7
V 0 = 1.15 V; R 0 = 2.5 m Ω
V 0 = 1.15 V; R 0 = 12.5 m Ω
V CE(sat)
I C = 100 A; V GE = 15 V; T VJ = 25°C
min. typ. max.
1.9 2.5
V
D11-D16
V 0 = 0.85 V; R 0 = 4 m Ω
T VJ = 125°C
2.2
V
V GE(th)
I CES
I C = 1.5 mA; V GE = V CE
V CE = V CES ; V GE = 0 V; T VJ = 25°C
4.5
6.5
1.4
V
mA
Thermal Response
T VJ = 125°C
1.5
mA
I GES
t d(on)
V CE = 0 V; V GE = ± 20 V
25
400
nA
ns
t r
t d(off)
t f
E on
E off
C ies
Q Gon
R thJC
Inductive load, T VJ = 125°C
V CE = 300 V; I C = 100 A
V GE = ±15 V; R G = 2.2 Ω
V CE = 25 V; V GE = 0 V; f = 1 MHz
V CE = 300V; V GE = 15 V; I C = 125 A
(per IGBT)
11
150
30
1.0
2.9
4.3
340
ns
ns
ns
mJ
mJ
nF
nC
0.3 K/W
IGBT (typ.)
T1-T6
C th1 = 0.232
C th2 = 1.504
T7
C th1 = 0.123
C th2 = 0.944
Diode (typ.)
J/K; R th1 = 0.223 K/W
J/K; R th2 = 0.077 K/W
J/K; R th1 = 0.419 K/W
J/K; R th2 = 0.131 K/W
D1-D6
C th1 = 0.138 J/K; R th1 = 0.48 K/W
Output Inverter D1 - D6
D7
C th2 = 0.957 J/K; R th2 = 0.13 K/W
C th1 = 0.038 J/K; R th1 = 1.74 K/W
Symbol
Conditions
Maximum Ratings
C th2 = 0.435 J/K; R th2 = 0.36 K/W
D11-D16
I F25
I F80
T C = 25°C
T C = 80°C
140
85
A
A
C th1 = 0.112 J/K; R th1 = 0.568 K/W
C th2 = 0.745 J/K; R th2 = 0.162 K/W
Symbol
Conditions
Characteristic Values
min. typ. max.
V F
I RM
t rr
I F = 100 A; V GE = 0 V; T VJ = 25°C
T VJ = 125°C
I F = 60 A; di F /dt = -500 A/μs; T VJ = 125°C
V R = 300 V; V GE = 0 V
1.9
1.4
28
100
2.2
V
V
A
ns
R thJC
(per diode)
0.61 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
? 2007 IXYS All rights reserved
2-4
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